10.1184/R1/6490232.v1
Jiawei Shi
Jiawei
Shi
Pengfei Li
Pengfei
Li
Baoan Liu
Baoan
Liu
Sheng Shen
Sheng
Shen
Tuning near field radiation by doped silicon
Carnegie Mellon University
2013
Mechanical Engineering
2013-05-01 00:00:00
Journal contribution
https://kilthub.cmu.edu/articles/journal_contribution/Tuning_near_field_radiation_by_doped_silicon/6490232
<p>In this letter, we demonstrate theoretically and experimentally that bulk silicon can be employed to overcome the challenge of tuning near field radiation. Theoretical calculation shows that the nanoscale radiation between bulk silicon and silicon dioxide can be tuned by changing the carrier concentration of silicon. Near field radiation measurements are carried out on multiple bulk silicon samples with different doping concentrations. The measured near field conductance agrees well with theoretical predictions, which demonstrates a tuning range from 2 nW/K to 6 nW/K at a gap of 60 nm.</p>