%0 Journal Article %A McKay, H. A. %A Feenstra, Randall %A Poole, P. J. %A Aers, G. C. %D 2003 %T Cross-sectional scanning tunneling microscopy studies of lattice-matched InGaAs/InP quantum wells: variations in growth switching sequence %U https://kilthub.cmu.edu/articles/journal_contribution/Cross-sectional_scanning_tunneling_microscopy_studies_of_lattice-matched_InGaAs_InP_quantum_wells_variations_in_growth_switching_sequence/6506588 %R 10.1184/R1/6506588.v1 %2 https://kilthub.cmu.edu/ndownloader/files/11969420 %K Physics %X

Cross-sectional scanning tunneling microscopy has been used to study variations in the source gas switching sequences in lattice-matched InGaAs/InP heterostructures grown by chemical beam epitaxy. Using finite element analysis, changes in well–barrier interface strain can be understood in terms of As/P exchange and As memory effect in the growth chamber. Results from annealed samples indicate a greater interdiffusion of group-V species than group-III species.

%I Carnegie Mellon University