McKay, H. A. Feenstra, Randall Poole, P. J. Aers, G. C. Cross-sectional scanning tunneling microscopy studies of lattice-matched InGaAs/InP quantum wells: variations in growth switching sequence <p>Cross-sectional scanning tunneling microscopy has been used to study variations in the source gas switching sequences in lattice-matched InGaAs/InP heterostructures grown by chemical beam epitaxy. Using finite element analysis, changes in well–barrier interface strain can be understood in terms of As/P exchange and As memory effect in the growth chamber. Results from annealed samples indicate a greater interdiffusion of group-V species than group-III species.</p> Physics 2003-01-01
    https://kilthub.cmu.edu/articles/journal_contribution/Cross-sectional_scanning_tunneling_microscopy_studies_of_lattice-matched_InGaAs_InP_quantum_wells_variations_in_growth_switching_sequence/6506588
10.1184/R1/6506588.v1