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Reconstructions of GaN and InGaN surfaces
journal contribution
posted on 2000-10-01, 00:00 authored by Randall FeenstraRandall Feenstra, Huajie Chen, V. Ramachandran, A. R. Smith, David GreveDavid GreveThe reconstruction and growth kinetics of gallium nitride (0001) and (0001̄) surfaces are studied using scanning tunneling microscopy (STM), reflection high-energy electron diffraction (RHEED) and low-energy electron diffraction (LEED). Results for bare GaN surfaces are summarized, with particular attention paid to the “pseudo-1×1” reconstruction of the (0001) face. Changes in the surface structure and kinetic processes due to indium co-deposition during growth are discussed.