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In-situ XRD for α-Ga₂O₃ in air, N₂ and vacuum.xlsx (338.54 kB)
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In-situ XRD for κ(ε)-Ga₂O₃ in air, N₂ and vacuum.xlsx (340.03 kB)
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In-situ XRD for γ-Ga₂O₃ in air, N₂ and vacuum.xlsx (503.92 kB)
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In-situ XRD annealing 2theta-omega scans

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posted on 2024-08-12, 15:54 authored by Jingyu TangJingyu Tang, Kunyao JiangKunyao Jiang, Posen TsengPosen Tseng, Rachel C. Kurchin, Lisa PorterLisa Porter, Robert F. Davis

The dataset will serve as supplemental material for a peer-reviewed journal article (Applied Physics Letters) currently under review. The funding agency (NSF) has requested that the data be made available through an open source platform.

The raw data include all in-situ XRD scans perfomred on α-Ga2O3, κ(ε)-Ga2O3 and γ-Ga2O3 thin films under three different environments (air, N2 and vacuum) in the temperature range from 25 ℃ to 900 ℃. 

Funding

Air Force Office of Scientific Research

National Science Foundation

History

Date

2024-07-12

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    Ultra-wide bandgap semiconductor material

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    CC BY 4.0

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