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Reconstructions of GaN and InGaN surfaces

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journal contribution
posted on 01.10.2000, 00:00 by Randall Feenstra, Huajie Chen, V. Ramachandran, A. R. Smith, David Greve

The reconstruction and growth kinetics of gallium nitride (0001) and (0001̄) surfaces are studied using scanning tunneling microscopy (STM), reflection high-energy electron diffraction (RHEED) and low-energy electron diffraction (LEED). Results for bare GaN surfaces are summarized, with particular attention paid to the “pseudo-1×1” reconstruction of the (0001) face. Changes in the surface structure and kinetic processes due to indium co-deposition during growth are discussed.

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01/10/2000

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