Scanning tunneling potentiometry of semiconductor junctions
journal contributionposted on 01.01.2002 by Yang Dong, Randall Feenstra, R. Hey, K. H. Ploog
Any type of content formally published in an academic journal, usually following a peer-review process.
A method for performing scanning tunneling potentiometry of semiconductor heterojunctions is described. The method yields a direct measure of the electrostatic potential distribution across the interface, with microscopic resolution. The measurement is accomplished by scanning the probe tip at constant sample–tip separation across the junction, and adjusting the sample–tip voltage to maintain a constant tunnel current. An example is given of potentiometry across a GaAs pn junction.