Carnegie Mellon University
Browse
- No file added yet -

A 1 mG lateral CMOS-MEMS accelerometer

Download (483.02 kB)
journal contribution
posted on 2000-01-01, 00:00 authored by Hao Luo, Gary K. Fedder, L. CarleyL. Carley
This paper reports a lateral CMOS-MEMS accelerometer with a measured noise floor of 1 mG/√(Hz) and a dynamic range larger than 13 G. The accelerometer is fully compatible with conventional CMOS processes enabling the integration of most of the conditioning circuits. It is fabricated in a three metal layer 0.5 μm CMOS process followed by a two-step dry etch release. An improved curl matching technique is utilized to solve the out-of-plane curl problem. A new differential amplifier is used for the capacitive sensing interface. The CMOS micromachining process used in this project is described. The design of accelerometer, system schematic applying force-balance feedback and experimental test results are presented

History

Publisher Statement

"©2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE." "This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder."

Date

2000-01-01

Usage metrics

    Categories

    Keywords

    Robotics

    Licence

    In Copyright

    Exports

    RefWorks
    BibTeX
    Ref. manager
    Endnote
    DataCite
    NLM
    DC