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Band offsets of InGaP/GaAs heterojunctions by scanning tunneling spectroscopy
journal contributionposted on 2008-01-01, 00:00 authored by Y. Dong, Randall FeenstraRandall Feenstra, M. P. Semtsiv, W. T. Masselink
Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions with InGaAs-like interfaces. Band offsets are probed using conductance spectra, with tip-induced band bending accounted for using three-dimensional electrostatic potential simulations together with a planar computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP band gap of 1.90 eV, which is appropriate to the disordered InGaP alloy, a valence band offset of 0.38±0.01 eV is deduced along with the corresponding conduction band offset of 0.10±0.01 eV (type I band alignment).