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Cross-sectional scanning tunneling microscopy studies of lattice-matched InGaAs/InP quantum wells: variations in growth switching sequence

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journal contribution
posted on 01.01.2003, 00:00 by H. A. McKay, Randall Feenstra, P. J. Poole, G. C. Aers

Cross-sectional scanning tunneling microscopy has been used to study variations in the source gas switching sequences in lattice-matched InGaAs/InP heterostructures grown by chemical beam epitaxy. Using finite element analysis, changes in well–barrier interface strain can be understood in terms of As/P exchange and As memory effect in the growth chamber. Results from annealed samples indicate a greater interdiffusion of group-V species than group-III species.




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