Distribution of nitrogen atoms in dilute GaAsN and InGaAsN alloys studied by scanning tunneling microscopy
journal contribution
posted on 2001-01-01, 00:00 authored by H. A. McKay, Randall FeenstraRandall Feenstra, T. Schmidtling, U. W. Pohl, J. F. Geisz<p>Nitrogen atoms in the cleaved (1 -1 0) surfaces of dilute GaAsN and InGaAsN alloys have been studied using cross-sectional scanning tunneling microscopy. The distribution of nitrogen atoms in GaAs<sub>0.983</sub>N<sub>0.017</sub> and In<sub>0.04</sub>Ga<sub>0.96</sub>As<sub>0.99</sub>N<sub>0.01</sub> alloys is found to be in agreement with random statistics, with the exception of a small enhancement in the number of [001]-oriented nearest neighbor pairs. The effects of annealing on In<sub>0.04</sub>Ga<sub>0.96</sub>As<sub>0.99</sub>N<sub>0.01</sub> alloys has been studied by scanning tunneling spectroscopy. Spectra display a reduced band gap compared to GaAs but little difference is seen between as-grown versus annealed InGaAsN samples. In addition, voltage dependent imaging has been used to investigate second-plane nitrogen atoms.</p>
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