Graphene on Carbon-face SiC{0001} Surfaces Formed in a Disilane Environment

The formation of epitaxial graphene on SiC(000-1) in a disilane environment is studied. The higher graphitization temperature required, compared to formation in vacuum, results in more homogeneous thin films of graphene. Some areas of the surface display unique electron reflectivity curves not seen in vacuum-prepared samples. Using selected area diffraction, these areas are found to have a graphene/SiC interface structure with a graphene-like buffer layer [analogous to what occurs on SiC(0001) surfaces].