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Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy

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posted on 01.01.2000, 00:00 authored by V. Ramachandran, Randall FeenstraRandall Feenstra, W. L. Sarney, L. Salamanca-Riba, David GreveDavid Greve
We have investigated the optimal conditions for molecular beam epitaxial growth of high quality GaN on 6H-SiC(0001) substrates. The quality of these films is reflected both by the narrow x-ray peak widths as well as the excellent surface morphology. In this work, it is shown that increasing growth temperature leads to an improvement in bulk quality and lower x-ray peak widths for both symmetric and asymmetric reflections. We also note a marked improvement in surface morphology, from a columnar appearance to a two-dimensional surface, under extremely Ga-rich growth conditions.

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01/01/2000

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