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Structure of clean and arsenic-covered GaN(0 0 0 1) surfaces

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journal contribution
posted on 01.02.2000, 00:00 by V. Ramachandran, C. D. Lee, Randall FeenstraRandall Feenstra, A. R. Smith, J. E. Northrup, David GreveDavid Greve

The effect of trace arsenic on the growth and surface structure of GaN(0 0 0 1) has been studied. We find that a partial pressure of only 10−9 Torr of arsenic during molecular beam epitaxial growth significantly modifies the growth kinetics. Such a small background pressure of arsenic leads to an arsenic-terminated surface displaying a 2×2 reconstruction during growth which is absent for the clean surface. First-principles theoretical calculations show that As-terminated surfaces are energetically more favorable than Ga-terminated surfaces for arsenic pressures of 10−9 Torr, and structural models for the As-adatom 2×2 reconstruction are presented.

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01/02/2000

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