Surface Morphology of GaN Surfaces during Molecular Beam Epitaxy

Feenstra, Randall; Chen, Huajie; Ramachandran, V.; Lee, C. D.; Smith, A. R.; Northrup, J. E.; Zywietz, T.; Neugebauer, J.; Greve, David

doi:10.1184/R1/6509258.v1

Surface Morphology of GaN Surfaces during Molecular Beam Epitaxy

journal contribution

posted on 2000-01-01, 00:00 authored by Randall FeenstraRandall Feenstra, Huajie Chen, V. Ramachandran, C. D. Lee, A. R. Smith, J. E. Northrup, T. Zywietz, J. Neugebauer, David GreveDavid Greve

<p>The reconstruction and surface morphology of gallium nitride (0001) and (000-1) surfaces are studied using scanning probe microscopy and reflection high-energy electron diffraction. Results for bare GaN surfaces are summarized, and changes in the surface structure and morphology due to co-deposition of indium or magnesium during growth are discussed.</p>