Surface Morphology of GaN Surfaces during Molecular Beam Epitaxy

Feenstra, Randall; Chen, Huajie; Ramachandran, V.; Lee, C. D.; Smith, A. R.; Northrup, J. E.; Zywietz, T.; Neugebauer, J.; Greve, David

doi:10.1184/R1/6509258.v1

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Surface Morphology of GaN Surfaces during Molecular Beam Epitaxy

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posted on 2000-01-01, 00:00 authored by Randall FeenstraRandall Feenstra, Huajie Chen, V. Ramachandran, C. D. Lee, A. R. Smith, J. E. Northrup, T. Zywietz, J. Neugebauer, David GreveDavid Greve

The reconstruction and surface morphology of gallium nitride (0001) and (000-1) surfaces are studied using scanning probe microscopy and reflection high-energy electron diffraction. Results for bare GaN surfaces are summarized, and changes in the surface structure and morphology due to co-deposition of indium or magnesium during growth are discussed.

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Surface Morphology of GaN Surfaces during Molecular Beam Epitaxy

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