file.pdf (1.1 MB)
Download file

Tuning near field radiation by doped silicon

Download (1.1 MB)
journal contribution
posted on 01.05.2013, 00:00 by Jiawei Shi, Pengfei LiPengfei Li, Baoan Liu, Sheng Shen

In this letter, we demonstrate theoretically and experimentally that bulk silicon can be employed to overcome the challenge of tuning near field radiation. Theoretical calculation shows that the nanoscale radiation between bulk silicon and silicon dioxide can be tuned by changing the carrier concentration of silicon. Near field radiation measurements are carried out on multiple bulk silicon samples with different doping concentrations. The measured near field conductance agrees well with theoretical predictions, which demonstrates a tuning range from 2 nW/K to 6 nW/K at a gap of 60 nm.

History

Publisher Statement

Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article may be found at http://dx.doi.org/10.1063/1.4804631

Date

01/05/2013

Usage metrics

Exports