The demand for highly-integrated analog filtering and frequency reference elements has spurred rapid innovation in the area of vibrating radio frequency (RF) MEMS. To date, however, no single technology has emerged that can simultaneously deliver monolithic, CMOS-compatible integration of intermediate frequency (IF) and RF components that can readily interface with 50 Ω, enable multi-frequency per single chip, permit the synthesis of reconfigurable receivers capable of adapting their frequencies and bandwidths to variations in the spectrum, and possess good temperature stability (first order Temperature coefficient of frequency(TCF) controlled to be within ± 20 ppm/˚C).